2011. 2. 25

2/5

KMB6D0DN35QB

Revision No : 0

ELECTRICAL CHARACTERISTICS (Tj=25

℃) UNLESS OTHERWISE NOTED

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

35

-

-

V

Drain Cut-off Current

-

-

1

μA

Gate Leakage Current

-

-

±100

nA

Gate Threshold Voltage

1.0

2.0

3.0

V

Drain-Source ON Resistance

-

24

28

m

Ω

-

35

42

On-State Drain Current

20

-

-

A

Forward Transconductance

-

20

-

S

Dynamic

Input Capacitance

-

460

-

pF

Ouput Capacitance

-

170

-

Reverse Transfer Capacitance

-

50

-

Total Gate Charge

-

9.0

12.6

nC

Gate-Source Charge

-

1.5

-

Gate-Drain Charge

-

3.0

-

Total Gate Charge

-

5.5

-

Turn-On Delay Time

-

16

-

ns

Turn-On Rise Time

-

14.5

25.5

Turn-Off Delay Time

-

40

-

Turn-Off Fall Time

-

11.5

21

Source-Drain Diode Ratings

Source-Drain Forward Voltage

-

0.75

1.2

V

Note1) Repetivity rating : Pulse width Limited by juntion temperature.

Note2) Pulse tesl : Pulse width

≤ 300㎲ , Duty cycle ≤ 2%

Note3) Essentially independenl of operating temperature.