2011. 6. 14

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SEMICONDUCTOR

TECHNICAL DATA

MBRP30U200CT

SCHOTTKY BARRIER TYPE DIODE

Revision No : 1

SWITCHING MODE POWER SUPPLY APPLICATION.

CONVERTER & CHOPPER APPLICATION.

FEATURES

・Average Output Rectified Current

・Repetitive Peak Reverse Voltage

MAXIMUM RATING (Ta=25

℃)

TO-247

A

MILLIMETERS

DIM

B

C

D

E

F

G

H

I

J

K

L

O

Q

M

Max. 4.50

4.57

R

S

U

15.90 0.30

+_

5.00 0.20

+_

20.85 0.30

+_

3.00 0.20

+_

2.00 0.20

+_

1.20 0.20

+_

20.10 0.70

+_

0.60 0.02

+_

2.00 0.10

+_

14.70 0.20

+_

3.19 0.20

+_

2.40 0.20

+_

N

13.26

P

5.45 0.30

+_

3.70 0.20

+_

3.60 0.20

+_

7.19 0.10

+_

U

S

M

K

B

I

123

A

R

Q

N

O

D

E

F

PP

CHARACTERISTIC

SYMBOL

RATING

UNIT

Repetitive Peak Reverse Voltage

200

V

Average Output Rectified

Current (Note)

30

A

Peak One Cycle Surge Forward

Current (Non-Repetitive 60Hz)

300

A

Junction Temperature

-40

～150

℃

Storage Temperature Range

-55

～150

℃

Note : average forward current of centertap full wave connection.

3

1

2

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Peak Forward Voltage

(Note)

-

-

0.95

V

Repetitive Peak

Reverse Current

(Note)

-

-

50

㎂

Reverse Recovery Time

(Note)

-

-

35

ns

Thermal Resistance

(Note)

Juction to Case

-

-

3

℃/W

Note : A value of one cell