AFS090 datasheet(204/334 Pages) MICROSEMI

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Device Architecture

2- 18 8

R e v isio n 2

Table 2-117 • 2.5 V LVCMOS High Slew

Commercial Temperature Range Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,

Worst-Case VCCI = 2.3 V

Applicable to Standard I/Os

Drive

Strength

Speed

Grade

tDOUT

tDP

tDIN

tPY

tEOUT

tZL

tZH

tLZ

tHZ

Units

2 mA

Std.

0.66

8.20

0.04

1.29

0.43

7.24

8.20

2.03

1.91

–1

0.56

6.98

0.04

1.10

0.36

6.16

6.98

1.73

1.62

–2

0.49

6.13

0.03

0.96

0.32

5.41

6.13

1.52

1.43

4 mA

Std.

0.66

8.20

0.04

1.29

0.43

7.24

8.20

2.03

1.91

–1

0.56

6.98

0.04

1.10

0.36

6.16

6.98

1.73

1.62

–2

0.49

6.13

0.03

0.96

0.32

5.41

6.13

1.52

1.43

6 mA

Std.

0.66

4.77

0.04

1.29

0.43

4.55

4.77

2.38

2.55

–1

0.56

4.05

0.04

1.10

0.36

3.87

4.05

2.03

2.17

–2

0.49

3.56

0.03

0.96

0.32

3.40

3.56

1.78

1.91

8 mA

Std.

0.66

4.77

0.04

1.29

0.43

4.55

4.77

2.38

2.55

–1

0.56

4.05

0.04

1.10

0.36

3.87

4.05

2.03

2.17

–2

0.49

3.56

0.03

0.96

0.32

3.40

3.56

1.78

1.91

Note:

For the derating values at specific junction temperature and voltage supply levels, refer to Table 3-7 on

page 3-9.

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