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AFS090 Datasheet(PDF) 112 Page - Microsemi Corporation |
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AFS090 Datasheet(HTML) 112 Page - Microsemi Corporation |
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112 / 334 page ![]() Device Architecture 2- 96 R e visio n 2 The diode’s voltage is measured at each current level and the temperature is calculated based on EQ 7. EQ 7 where ITMSLO is the current when the Temperature Strobe is Low, typically 100 µA ITMSHI is the current when the Temperature Strobe is High, typically 10 µA VTMSLO is diode voltage while Temperature Strobe is Low VTMSHI is diode voltage while Temperature Strobe is High n is the non-ideality factor of the diode-connected transistor. It is typically 1.004 for the Microsemi- recommended transistor type 2N3904. K = 1.3806 x 10-23 J/K is the Boltzman constant Q = 1.602 x 10-19 C is the charge of a proton When I TMSLO / ITMSHI = 10, the equation can be simplified as shown in EQ 8. EQ 8 In the Fusion TMB, the ideality factor n for 2N3904 is 1.004 and ΔV is amplified 12.5 times by an internal amplifier; hence the voltage before entering the ADC is as given in EQ 9. EQ 9 This means the temperature to voltage relationship is 2.5 mV per degree Kelvin. The unique design of Fusion has made the Temperature Monitor System simple for the user. When the 10-bit mode ADC is used, each LSB represents 1 degree Kelvin, as shown in EQ 10. That is, e. 25°C is equal to 293°K and is represented by decimal 293 counts from the ADC. EQ 10 If 8-bit mode is used for the ADC resolution, each LSB represents 4 degrees Kelvin; however, the resolution remains as 1 degree Kelvin per LSB, even for 12-bit mode, due to the Temperature Monitor design. An example of the temperature data format for 10-bit mode is shown in Table 2-38. Table 2-38 • Temperature Data Format Temperature Temperature (K) Digital Output (ADC 10-bit mode) –40°C 233 00 1110 1001 –20°C 253 00 1111 1101 0°C 273 01 0001 0001 1°C 274 01 0001 0010 10 °C 283 01 0001 1011 25°C 298 01 0010 1010 50 °C 323 01 0100 0011 85 °C 358 01 0110 0110 VTMSLO VTMSHI – n kT q ------- ln ITMSLO ITMSHI ----------------- ⎝⎠ ⎛⎞ = ΔVV TMSLO VTMSHI – 1.986 10 4 – × nT == V ADC ΔV 12.5 × 2.5 mV KT × () ⁄ == 1K 2.5 mV 2 10 2.56 V ----------------- × 1 LSB == |
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