AFS090 datasheet(178/334 Pages) MICROSEMI

178 / 334 page

Device Architecture

2- 16 2

R e v isio n 2

User I/O Characteristics

Timing Model

Figure 2-113 • Timing Model

Operating Conditions: –2 Speed, Commercial Temperature Range (TJ =70°C),

Worst-Case VCC = 1.425 V

Combinational Cell

I/O Module

(Non-Registered)

LVPECL (Pro IO banks)

LVPECL

(Pro IO Banks)

LVDS,

BLVDS,

M-LVDS (Pro IO Banks)

GTL+ 3.3 V

Combinational Cell

LVTTL/LVCMOS 3.3 V (Pro I/O banks)

Output drive strength = 24 mA

High slew rate

LVCMOS 1.5 V (Pro IO banks)

Output drive strength = 12 mA

High slew

LVTTL/LVCMOS 3.3 V (Pro I/O banks)

Output drive strength = 12 mA

High slew rate

IInput LVTTL/LVCMOS

3.3 V (Pro IO banks)

Input LVTTL/LVCMOS

3.3 V (Pro IO banks)

Input LVTTL/LVCMOS

3.3 V (Pro IO banks)

I/O Module

(Non-Registered)

I/O Module

(Non-Registered)

I/O Module

(Non-Registered)

I/O Module

(Registered)

I/O Module

(Registered)

I/O Module

(Non-Registered)

tPD = 0.56 ns

tPD = 0.49 ns

tDp = 1.60 ns

tPD = 0.87 ns

tDP = 2.74 ns

tPD = 0.51 ns

tPD = 0.47 ns

tOCLKQ = 0.59 ns

tOSUD = 0.31 ns

tPY = 0.90 ns

tDP = 1.53 ns

tDP = 3.30 ns

tDP = 2.39 ns

tCLKQ = 0.55 ns

tSUD = 0.43 ns

tPY = 0.90 ns

tCLKQ = 0.55 ns

tSUD = 0.43 ns

tPY = 1.36 ns

tPY = 0.90 ns

tPY = 1.22 ns

tICLKQ = 0.24 ns

tISUD = 0.26 ns

AFS090 Datasheet(PDF) 178 Page - Microsemi Corporation

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