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WFF840B Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # WFF840B
Description  Silicon N-Channel MOSFET
PDF  7 Pages
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

WFF840B Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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W
W
W
WF
F
F
FF840B
F840B
F840B
F840B
2/7
Steady,
Steady,
Steady,
Steady, all
all
all
all for
for
for
for your
your
your
your advance
advance
advance
advance
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
Gate-source breakdown voltage
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
IDSS
VDS=500V,VGS=0V
-
-
1
µA
VDS=400V,TC=125℃
10
µA
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
500
-
-
V
Breakdown voltage Temperature
Coefficient
△BVDSS/
△TJ
ID=250µA,Referenced
to 25℃
-
0.57
-
V/℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
3
-
5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=4.5A
-
-
0.75
Ω
Forward Transconductance
gfs
VDS=40V,ID=4.5A
-
6.5
-
S
Input capacitance
Ciss
VDS=25V,
VGS=0V,
f=1MHz
-
790
1030
pF
Reverse transfer capacitance
Crss
-
24
30
Output capacitance
Coss
-
130
170
Switching time
Rise time
tr
VDD=250V,
ID=9A
RG=25Ω
(Note4,5)
-
65
140
ns
Turn-on time
ton
-
18
15
Fall time
tf
-
64
125
Turn-off
time
toff
-
93
195
Total gate charge(gate-source
plus gate-drain)
Qg
VDD=400V,
VGS=10V,
ID=9A
(Note4,5)
-
28
35
nC
Gate-source charge
Qgs
-
4
-
Gate-drain("miller") Charge
Qgd
-
15
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
9
A
Pulse drain reverse current
IDRP
-
-
-
36
A
Forward voltage(diode)
VDSF
IDR=9A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=9A,VGS=0V,
dIDR / dt =100 A / µs
-
335
-
ns
Reverse recovery charge
Qrr
-
2.95
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=8mH IAS=9A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution



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