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WFSA5406 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # WFSA5406
Description  N- Channel and P-Channel Silicon MOSFETs
PDF  8 Pages
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

WFSA5406 Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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WFSA5406
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N-Channel Electrical Characteristics at Ta=250C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=250uA, VGS=0V
60
-
-
V
Zero-Gate Voltage Drain Current
IDSS
VDS=48V, VGS=0V
-
-
1
uA
Gate-to-Source Leakage Current
IGSS
VGS=+25V, VDS=0V
-
-
+100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
1
2
2.5
V
Static Drain-to-Source On-State Resistance
RDS(ON)
ID=5A, VGS=10V
-
38
52
mΩ
RDS(ON)
ID=4A, VGS=4.5V
-
55
75
mΩ
Input Capacitance
Ciss
VDS=30V,
VGS=0V,
f=1MHz
-
915
-
pF
Output Capacitance
Coss
-70
-
Reverse Transfer Capacitance
Crss
-45
-
Turn-on Delay Time
td(on)
VGEN=10V,
VDS=30V,
RL=30Ω,ID=1A,
RGEN=6Ω
-9
17
nS
Rise Time
tr
-6
12
Turn-off Delay Time
td(off)
-25
46
Fall Time
tf
-5
10
Total Gate Charge
Qg
VDS=30V,
VGS=10V,
ID=5A
-19
27
nC
Gate-to-Source Charge
Qgs
-4.4
-
Gate-to-Drain “Miller” Charge
Qgd
-4.4
-
Diode Forward Voltage
VSD
IS=2.5A, VGS=0V
-
0.8
1.1
V



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