HITJ0201MP datasheet(2/7 Pages) RENESAS

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HITJ0201MP

Preliminary

R07DS0473EJ0100 Rev.1.00

Page 2 of 6

Jun 22, 2011

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

–20

—

ID = –10 mA, VGS = 0

V(BR)GSS

—

IG = +100 A, VDS = 0

Gate to source breakdown voltage

V(BR)GSS

–12

—

IG = –100 A, VDS = 0

IGSS

—

+10

A

VGS = +6 V, VDS = 0

Gate to source leak current

IGSS

—

–10

A

VGS = –10 V, VDS = 0

Drain to source leak current

IDSS

—

–1

A

VDS = –20 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

–0.4

—

–1.4

VDS = –10 V, ID = –1 mA

RDS(on)

—



ID = –1.8 A, VGS = –4.5 V

Note3

Drain to source on state resistance

RDS(on)

—

112



ID = –1.8 A, VGS = –2.5 V

Note3

Forward transfer admittance

|yfs|

4.5

6.5

—

ID = –1.8 A, VDS = –10 V

Note3

Input capacitance

Ciss

—

597

—

Output capacitance

Coss

—

149

—

Reverse transfer capacitance

Crss

—

VDS = –10 V

VGS = 0

f = 1 MHz

Turn - on delay time

td(on)

—

Rise time

—

Turn - off delay time

td(off)

—

Fall time

—

ID = –1.8 A

VGS = –4.5 V

RL = 5.5 

Rg = 4.7



Total gate charge

—

6.3

—

Gate to source charge

Qgs

—

1.1

—

Gate to drain charge

Qgd

—

2.5

—

VDD = –10 V

VGS = –4.5 V

ID = –3.4 A

Body - drain diode forward voltage

VDF

—

–0.85

–1.1

IF = –3.4 A, VGS = 0

Note3

Notes: 3. Pulse test

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