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BYP302 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BYP302 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 3 page  Semiconductor Group 1 12.96 BYP 302 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 302 1200V 40A 130ns TO-218 AD C67047-A2252-A2 Maximum Ratings Parameter Symbol Values Unit Mean forward current TC = 90 °C, D = 0.5 IFAV 25 A RMS forward current IFRMS 40 Surge forward current, sine halfwave, aperiodic Tj = 100 °C, f = 50 Hz IFSM 115 Repetitive peak forward current Tj = 100 °C, tp ≤ 10 µs IFRM 260 i 2t value Tj = 100 °C, tp = 10 ms ∫i2dt 66 A2s Repetitive peak reverse voltage VRRM 1200 V Surge peak reverse voltage VRSM 1200 Power dissipation TC = 90 °C Ptot 75 W Chip or operating temperature Tj -40 ... + 150 °C Storage temperature Tstg -40 ... + 150 Thermal resistance, chip case RthJC ≤ 0.8 K/W Thermal resistance, chip-ambient RthJA ≤ 46 DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 40 / 150 / 56 |
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