GaAs FET

CLY 5

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Siemens Aktiengesellschaft

pg. 3/8

17.12.96

HL EH PD21

Compression Power vs. Drain-Source Voltage

f = 1.8GHz; IDS=0.5IDSS

P1dB

η

η

D

0

5

10

15

20

25

30

35

40

[dBm]

0123

4567

8

0

10

20

30

40

50

60

70

80

[%]

[V]

Drain-Source Voltage

Gain

P1dB

0

2

4

6

8

10

12

16

[dB]

01

23

45

67

8

0

0.25

0.5

0.75

1.0

1.25

1.5

1.75

2.0

[W]

[V]

Drain-Source Voltage

14

Output Characteristics

0

0,1

0,3

0,5

0,7

0,9

0123456

Drain-Source Voltage [V]

VGS = 0V

VGS = -0.5V

VGS = -1V

VGS = -1.5V

VGS = -2V

PtotDC