NP74N04YUG datasheet(2/8 Pages) RENESAS

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NP74N04YUG

Chapter Title

R07DS0017EJ0100 Rev.1.00

Page 2 of 6

Jul 01, 2010

Electrical Characteristics (TA = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero Gate Voltage Drain Current

IDSS

μA

VDS = 40 V, VGS = 0 V

Gate Leakage Current

IGSS

±100

VGS =

±20 V, VDS = 0 V

Gate to Source Threshold Voltage

VGS(th)

2.0

3.0

4.0

VDS = VGS, ID = 250

μ A

Forward Transfer Admittance ∗

| yfs |

VDS = 5 V, ID = 37.5 A

Drain to Source On-state

Resistance ∗

RDS(on)

4.2

5.5

VGS = 10 V, ID = 37.5 A

Input Capacitance

Ciss

3620

5430

VDS = 25 V,

Output Capacitance

Coss

330

500

VGS = 0 V,

Reverse Transfer Capacitance

Crss

220

400

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 20 V, ID = 37.5 A,

Rise Time

VGS = 10 V,

Turn-off Delay Time

td(off)

124

RG = 0

Fall Time

Total Gate Charge

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

VDD = 32 V,

VGS = 10 V,

ID = 75 A

Body Diode Forward Voltage ∗

VF(S-D)

0.94

1.5

IF = 75 A, VGS = 0 V

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

IF = 75 A, VGS = 0 V,

di/dt = 100 A/

μ s

Note: ∗1. Pulsed

TEST CIRCUIT 3 GATE CHARGE

VGS = 20

→ 0 V

PG.

RG = 25

D.U.T.

VDD

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.

VDD

TEST CIRCUIT 2 SWITCHING TIME

PG.

IG = 2 mA

D.U.T.

VDD

IAS

VDS

BVDSS

Starting Tch

VGS

= 1 s

Duty Cycle

≤ 1%

VGS

Wave Form

VDS

Wave Form

VGS

VDS

10%

90%

VGS

VDS

ton

toff

td(on)

td(off)

10%

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