AM2301PE

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM2301PE_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

-2.6

-2.1

-20

PRODUCT SUMMARY

P-Channel 20-V (D-S) MOSFET

•

extends battery life

•

Low thermal impedance copper leadframe

SOT-23 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

D

S

G

Symbol Maximum Units

-20

±8

o

C

-2.6

o

C

-1.5

-10

±1.6

A

o

C

1.25

o

C

0.8

-55 to 150

o

C

Power Dissipation

a

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

Parame te r

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

A

Symbol Maximum Units

t <= 5 sec

100

Steady-State

166

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

ESD Protected