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IL205AT Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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IL205AT Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 3 page ![]() Semiconductor Group 4–1 Package Dimensions in Inches (mm) Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage VF 1.3 1.5 V IF=10 mA Reverse Current IR 0.1 100 µAV R=6.0 V Capacitance CO 25 pF VR=0 Detector Breakdown Voltage Collector-Emitter BVCEO 70 V IC=100 µA Emitter-Collector BVECO 710 V IE=100 µA Collector-Emitter VCE=10 V, Dark Current ICEOdark 550 nA IF=0 Collector-Emitter Capacitance CCE 10 pF VCE=0 Package DC Current Transfer CTRDC %IF=10 mA, VCE=5 V IL205AT 40 80 IL206AT 63 125 IL207AT 100 200 IL208AT 160 320 DC Current Transfer CTRDC %IF=1 mA, VCE=5 V IL205AT 13 25 IL206AT 22 40 IL207AT 34 60 IL208AT 56 95 Collector-Emitter IC=2.0 mA, Saturation Voltage VCE sat 0.4 IF=10 mA Isolation Test Voltage VIO 2500 VACRMS Equivalent DC Isolation Voltage 3535 VDC Capacitance, Input to Output CIO 0.5 pF Resistance, Input to Output RIO 100 G Ω Switching Time tON, tOFF 3.0 µsI C=2 mA, RE=100 Ω, VCE=10 V Specifications subject to change. TOLERANCE: ±.005 (unless otherwise noted) FEATURES • High Current Transfer Ratio, I F=10mA, VCE=5 V IL205AT, 40 – 80% IL206AT, 63 –125% IL207AT, 100 – 200% IL208AT, 160 – 320% • High BV CEO, 70 V • Isolation Voltage, 2500 VAC RMS • Industry Standard SOIC-8 Surface Mountable Package • Standard Lead Spacing, .05" • Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A) • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • Underwriters Lab File #E52744 (Code Letter P) DESCRIPTION The IL205AT/206AT/207AT/208AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL205/6/7/8 come in a standard SOIC-8 small outline package for surface mounting which makes them ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 volts gives a higher safety margin compared to the industry standard 30 volts. Maximum Ratings Emitter Peak Reverse Voltage ....................................... 6.0 V Continuous Forward Current .......................... 60 mA Power Dissipation at 25 °C ............................. 90 mW Derate Linearly from 25 °C .......................1.2 mW/°C Detector Collector-Emitter Breakdown Voltage ................ 70 V Emitter-Collector Breakdown Voltage .................. 7 V Collector-Base Breakdown Voltage ................... 70 V Power Dissipation ........................................ 150 mW Derate Linearly from 25 °C .......................2.0 mW/°C Package Total Package Dissipation at 25 °C Ambient (LED + Detector) ...................................... 240 mW Derate Linearly from 25 °C .......................3.3 mW/°C Storage Temperature ..................... –55 °C to +150°C Operating Temperature ................. –55 °C to +100°C Soldering Time at 260 °C ............................... 10 sec. 40 ° .240 (6.10) .154 ±.005 (3.91 ±.13) .050 (1.27) typ. .016 (.41) .192 ±.005 (4.88 ±.13) .004 (.10) .008 (.20) Lead Coplanarity ±.0015 (.04) max. .015 ±.002 (.38 ±.05) .008 (.20) 7 ° .058 ±.005 (1.49 ±.13) .125 ±.005 (3.18 ±.13) Pin One ID .120 ±.005 (3.05 ±.13) CL .021 (.53) 5 ° max. R.010 (.25) max. .020 ±.004 (.15 ±.10) 2 plcs. 1 2 3 4 Anode Cathode NC NC 8 7 6 5 NC Base Collector Emitter IL205AT/206AT/207AT/ 208AT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER 10.95 |
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