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IL66 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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IL66 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 3 page ![]() 5–1 FEATURES • Internal RBE for High Stability • Current Transfer Ratio is Tested at 2.0 mA and 0.7 mA Input IL/ILD/ILQ66 Series: - 1, 100% min. at IF=2 mA, VCE=10 V - 2, 300% min. at IF=2 mA, VCE=10 V - 3, 400% min. at IF=0.7 mA, VCE=10 V - 4, 500% min. at IF=2 mA, VCE=5 V • Four Available CTR Categories per Package Type • BVCEO>60 V • Standard DIP Packages • Underwriters Lab File #E52744 • VDE 0884 Available with Option 1 DESCRIPTION IL66, ILD66, and ILQ66 are optically coupled isola- tors employing Gallium Arsenide infrared emitters and silicon photodarlington detectors. Switching can be accomplished while maintaining a high degree of isolation between driving and load cir- cuits, with no crosstalk between channels. Maximum Ratings Emitter (Each Channel) Peak Reverse Voltage........................................ 6 V Continuous Forward Current......................... 60 mA Power Dissipation at 25 °C ......................... 100 mW Derate Linearly from 25 °C ................... 1.33 mW/°C Detector (Each Channel) Power Dissipation at 25 °C Ambient........... 150 mW Derate Linearly from 25 °C ..................... 2.0 mW/°C Package Isolation Test Voltage (t=1 sec.)........................................5300 VACRMS Total Package Power Dissipation at 25 °C IL66.......................................................... 250 mW ILD66 ....................................................... 400 mW ILQ66 ....................................................... 500 mW Derate Linearly from 25 °C IL66...................................................... 3.3 mW/ °C ILD66 ................................................. 5.33 mW/ °C ILQ66 ................................................. 6.67 mW/ °C Creepage.................................................7 min mm Clearance ................................................7 min mm Comparative Tracking Index..............................175 Isolation Resistance VIO=500 V, TA=25°C................................≥10 12 Ω VIO=500 V, TA=100°C..............................≥10 11 Ω Storage Temperature ................... –55 °C to +125°C Operating Temperature................ –55 °C to +100°C Lead Soldering Time at 260 °C ....................10 sec. V DE Dimensions in inches (mm) .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .130 (3.30) .150 (3.81) .020 (.051) min. .300 (7.62) Typ. .031 (0.80) .035 (0.90) .039 (1.00) min. .018 (0.45) .022 (0.55) .335 (8.50) .343 (8.70) 6 5 4 1 2 3 18 ° Typ. .300 (7.62) .347 (8.82) 4 ° typ. .255 (6.48) .268 (6.81) 3 4 6 5 .379 (9.63) .390 (9.91) .030 (.76) .045 (1.14) 4 ° Typ. .100 (2.54) Typ. .100 (2.54) Typ. 10 ° Typ. 3 °–9° .305 Typ. (7.75) Typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .115 (2.92) .135 (3.43) 1 2 8 7 .130 (3.30) .150 (3.81) .030 (.76 ) .040 (1.02) 1 2 3 6 5 4 Anode Cathode NC Base Collector Emitter Anode Cathode Cathode Anode Emitter Collector Collector Emitter 1 2 3 4 8 7 6 5 Anode Cathode Cathode Anode Emitter Collector Collector Emitter 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 Emitter Collector Collector Emitter Anode Cathode Cathode Anode .248 (6.30) .256 (6.50) .255 (6.48) .268 (6.81) .779 (19.77 ) .790 (20.07) Pin One I.D. .130 (3.30) .150 (3.81) .030 (.76 ) .040 (1.02) .030 (.76) .045 (1.14) 4 ° Typ. .100 (2.54) Typ. .018 (.46) .022 (.56) 10 ° Typ. 3 °–9° .305 Typ. (7.75) Typ. .008 (.20) .012 (.30) .115 (2.92) .135 (3.43) Pin One I.D. Pin One I.D. SINGLE CHANNEL IL66 SERIES DUAL CHANNEL ILD66 SERIES QUAD CHANNEL ILQ 66 SERIES PHOTODARLINGTON OPTOCOUPLER |
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