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IL766 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part # IL766
Description  BIDIRECTIONAL INPUT DARLINGTON OPTOCOUPLERS
PDF  3 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

IL766 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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5–1
FEATURES
• Internal RBE for Better Stability
• High Current Transfer Ratios, VCE=5 V
IL/ILD766-1: 500% at IF=2 mA
IL/ILD766-2: 500% at IF=1.0 mA
•BVCEO >60 V
• AC or Polarity Insensitive Inputs
• Built-In Reverse Polarity Input Protection
• Industry Standard DIP Package
• Underwriters Lab File #E52744
DESCRIPTION
The IL/ILD766 are bidirectional input optically cou-
pled isolators. They consist of two Gallium Ars-
enide infrared emitting diodes coupled to a silicon
NPN photodarlington per channel.
The IL766 are single channel optocouplers. The
ILD766 has two isolated channels in a single DIP
package. They are designed for applications
requiring detection or monitoring of AC signals.
Maximum Ratings
Emitter (Each Channel)
Continuous Forward Current .........................60 mA
Power Dissipation at 25
°C
Single Channel ....................................... 200 mW
Dual Channel............................................ 90 mW
Derate Linearly from 25
°C
Single Channel ................................... 2.6 mW/
°C
Dual Channel...................................... 1.2 mW/
°C
Detector (Each Channel)
Collector-Emitter Breakdown Voltage .............. 60 V
Collector-Base Breakdown Voltage ................. 70 V
Power Dissipation at 25
°C .........................100 mW
Derate Linearly from 25
°C ...................1.33 mW/°C
Package
Isolation Test Voltage
(t= 1 sec.)................... 7500 VACPK/5300 VACRMS
Isolation Resistance
TA=25°C........................................................≥10
12
Ω
TA=100°C .....................................................≥10
11
Ω
Total Power Dissipation at 25
°C Ambient
(LED Plus Detector)
Single Channel ....................................... 250 mW
Dual Channel.......................................... 400 mW
Derate Linearly from 25
°C
Single Channel ................................... 3.3 mW/
°C
Dual Channel .................................... 5.3 mW/
°C
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Comparative Tracking Index per
DIN IEC 112/VDE303, part 1 ......................... 175
Storage Temperature.................... –55
°C to +150°C
Operating Temperature ................ –55
°C to +100°C
Lead Soldering Time at 260
°C.................... 10 sec.
Electrical Characteristics (TA=25°C)
Sym
Min
Typ
Max.
Unit
Condition
Emitter
Forward Voltage
VF
1.2
1.5
V
IF=±10 mA
Detector
Breakdown Voltage,
Collector-Emitter
Collector-Base
BVCEO
BVCBO
60
60
75
90
V
V
IC=1 mA
IC=10 µA
Leakage Current,
Collector-Emitter
ICEO
10
100
nA
VCE=10 V
Package
Saturation Voltage,
Collector-Emitter
VCEsat
1.0
V
IF=±10 mA,
IC=10 mA
DC Current Transfer
Ratio
IL766/ILD766-1
IL766-2
CTR
500
500
%
%
IF=±2 mA,
VCE=5 V
IF=±1.0 mA,
VCE=5 V
Rise Time, Fall Time
100
µsVCC=10 V,
IF=±2 mA,
RL=100 Ω
Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode/
Cathode
Cathode/
Anode
NC
Emitter
Collector
Collector
Emitter
1
2
3
4
8
7
6
5
Anode/
Cathode
Cathode/
Anode
Anode/
Cathode
Cathode/
Anode
Pin One ID.
.255 (6.48)
.268 (6.81)
3
4
6
5
.379 (9.63)
.390 (9.91)
.030 (.76)
.045 (1.14)
4
°
Typ.
.100 (2.54)Typ.
10
°
Typ.
3
°–9°
.305 Typ.
(7.75) Typ.
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.115 (2.92)
.135 (3.43)
1
2
8
7
.130 (3.30)
.150 (3.81)
.030 (.76 )
.040 (1.02)
.010 (.25)
.014 (.35)
.110 (2.79)
.150 (3.81)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
Typ.
.031 (0.80)
.035 (0.90)
.039
(1.00)
min.
.018 (0.45)
.022 (0.55)
.335 (8.50)
.343 (8.70)
6
5
4
1
2
3
18
°
Typ.
.300 (7.62)
.347 (8.82)
4
°
Typ.
.100 (2.54) Typ.
.248 (6.30)
.256 (6.50)
Pin One
I.D.
Dual Channel
Single Channel
SINGLE CHANNEL
IL766
DUAL CHANNEL
ILD766
BIDIRECTIONAL INPUT
DARLINGTON OPTOCOUPLERS


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