2SB824L-X-AB3-R datasheet(2/5 Pages) UTC

2 / 5 page

2SB824

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R208-042.C

ABSOLUTE MAXIMUM RATINGS (TA=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

-60

Collector to Emitter Voltage

VCEO

-50

Emitter to Base Voltage

VEBO

-6

Collector Current

-5

Collector Current (Pulse)

ICP

-9

Collector Dissipation

SOT-89

0.5

TO-126/ TO-251

Junction Temperature

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-to-Base Breakdown Voltage

BVCBO

IC =-1mA, IE=0

-60

Collector-to-Emitter Breakdown Voltage

BVCEO

IC=-1mA, RBE =∞

-50

Emitter-to-Base Breakdown Voltage

BVEBO

IC =0, IE=-1mA

-6

Collector Cut-Off Current

ICBO

VCB=-40V, IE=0

-0.1

Emitter Cut-Off Current

IEBO

VEB=-4V, IC=0

-0.1

DC Current Gain

hFE1

VCE=-2V, IC=-1A

360

hFE2

VCE=-2V, IC=-3A

Gain Bandwidth Product

VCE =-5V, IC =-1A

MHZ

Output Capacitance

COB

VCB =-10V, f=1MHz

100

Collector-to-Emitter Saturation Voltage

VCE(SAT) IC=-3A, IB=-0.3A

-0.4

Turn-ON Time

tON

See specified test circuit

0.1

μs

Storage Time

tSTG

See specified test circuit

1.4

μs

Fall Time

See specified test circuit

0.2

μs

CLASSIFICATION of hFE1

RANK

RANGE

70-140

100-200

180-360

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