7N50 datasheet(2/6 Pages) UTC

2 / 6 page

7N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-527.b

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

500

Gate-Source Voltage

VGSS

±30

Continuous (TC=25°C)

7 (Note 5)

Drain Current

Pulsed (Note 2)

IDM

28 (Note 5)

Avalanche Current (Note 2)

IAR

Single Pulsed (Note 3)

EAS

270

Avalanche Energy

Repetitive (Note 4)

EAR

8.9

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

Power Dissipation (TC=25°C)

TO-220F1

TO-220

0.71

Derate above 25°C

TO-220F1

0.31

W/°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 10mH, IAS = 7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

5. Drain current limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°C/W

TO-220

1.4

Junction to Case

TO-220F1

θJC

3.2

°C/W

7N50 Datasheet(PDF) 2 Page - Unisonic Technologies

7N50 Datasheet(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL