7N90

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-475.b

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

900

V

Gate to Source Voltage

±30

V

Continuous Drain Current

7.0

A

4.4

A

Pulsed Drain Current (Note 2)

28

A

Avalanche Current (Note 2)

6.4

A

Single Pulsed Avalanche Energy (Note 3)

500

mJ

Repetitive Avalanche Energy

(Note 2)

21

mJ

Peak Diode Recovery dv/dt

(Note 4)

dv/dt

4.0

V/ns

Power Dissipation

32

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

3.87

°C/W