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8N90 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 8N90
Description  8A, 900V N-CHANNEL POWER MOSFET
PDF  5 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

8N90 Datasheet(HTML) 2 Page - Unisonic Technologies

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8N90
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-470.d
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Continuous Drain Current (TC=25°C)
ID
8
A
Pulsed Drain Current (Note 1)
IDM
25
A
Avalanche Current (Note 1)
IAR
6.3
A
Single Pulsed Avalanche Energy (Note 2)
EAS
850
mJ
Repetitive Avalanche Energy (Note 1)
EAR
17.1
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
V/ns
Power Dissipation (TC=25°C)
PD
147
W
Linear Derating Factor above TC=25°C
1.17
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=27mH, IAS=8A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
0.85
°C/W



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