9N95 datasheet(2/6 Pages) UTC

2 / 6 page

9N95

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-721.A

ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

950

Gate-Source Voltage

VGSS

±30

Continuous Drain Current (TC = 25°C)

9.0

Pulsed Drain Current (Note 2)

IDM

Avalanche Current (Note 2)

IAR

9.0

Avalanche Energy

Single Pulsed(Note 3)

EAS

900

Repetitive(Note 2)

EAR

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.0

V/ns

Power Dissipation

160

Linear Derating Factor above TC = 25°C

1.28

W/°C

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD≤9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

°C/W

Junction to Case

θJC

0.78

°C/W

ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250μA

950

Drain-Source Leakage Current

IDSS

VDS = 950 V, VGS = 0 V

μA

Gate-Body Leakage Current

Forward

IGSSF

VGS = 30 V, VDS = 0 V

100

Reverse

IGSSR

VGS = -30 V, VDS = 0 V

-100

Breakdown Voltage Temperature Coefficient

△

DSS/△TJ

ID=250μA, Referenced to 25°C

0.99

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

3.0

5.0

Static Drain-Source On-Resistance

RDS(ON)

VGS = 10V, ID = 4.5A

1.05

1.4

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

2100 2730 pF

Output Capacitance

COSS

175

230

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD = 475V, ID =11.0 A,

RG = 25Ω (Note 1, 2)

110

Turn-On Rise Time

120

250

Turn-Off Delay Time

tD(OFF)

100

210

Turn-Off Fall Time

160

Total Gate Charge

VDS = 760V, ID = 11.0A,

VGS = 10 V (Note 1,2)

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

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