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LD262 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part # LD262
Description  GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
PDF  4 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

LD262 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

  LD262 Datasheet HTML 1Page - Siemens Semiconductor Group LD262 Datasheet HTML 2Page - Siemens Semiconductor Group LD262 Datasheet HTML 3Page - Siemens Semiconductor Group LD262 Datasheet HTML 4Page - Siemens Semiconductor Group  
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Semiconductor Group
2
1997-11-01
LD 260
LD 262 ... LD 269
Grenzwerte (
T
A = 25 °C)
Maximum Ratings
Typ
Type
IRED
pro Zeile
per Row
Maß “A”
Dimension “A”
Bestellnummer
Ordering Code
Gehäuse
Package
min.
max.
LD 262
2
4.5
4.9
Q62703-Q70
Zeilenbauform, Leiterbandgehäuse,
klares Epoxy-Gießharz, linsenförmig,
Anschlüsse im 2.54-mm-Raster (1/10’’),
Kathodenkennzeichnung:
Nase am Lötspieß
Lead frame arrays, transparent epoxy
resin lens, solder tabs, lead spacing
2.54 mm (1/10’’), cathode marking:
projection at solder lead
LD 263
3
7
7.4
Q62703-Q71
LD 264
4
9.6
10
Q62703-Q72
LD 265
5
12.1
12.5
Q62703-Q73
LD 266
6
14.6
15
Q62703-Q74
LD 267
7
17.2
17.6
Q62703-Q75
LD 268
8
19.7
20.1
Q62703-Q76
LD 269
9
22.3
22.7
Q62703-Q77
LD 260
10
24.8
25.2
Q62703-Q78
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op; Tstg
– 40 ... + 80
°C
Sperrschichttemperatur
Junction temperature
T
j
80
°C
Sperrspannung
Reverse voltage
V
R
5V
Durchlaßstrom
Forward current
I
F
50
mA
Stoßstrom,
τ≤ 10 µs, D = 0
Surge current
I
FSM
1.6
A
Verlustleistung
Power dissipation
P
tot
70
mW
Wärmewiderstand
Thermal resistance
R
thJA
R
thJL
750
650
K/W
K/W



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