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11N40 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 11N40
Description  11.4A, 400V N-CHANNEL POWER MOSFET
PDF  6 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

11N40 Datasheet(HTML) 2 Page - Unisonic Technologies

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11N40
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-219.D
ABSOLUTE MAXIMUM RATING (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current (TC = 25℃)
ID
11.4
A
Pulsed Drain Current (Note 2)
IDM
46
A
Avalanche Current (Note 2)
IAR
11.4
A
Single Pulsed(Note 3)
EAS
520
Avalanche Energy
Repetitive(Note 2)
EAR
14.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
147
W
Derate above 25℃
PD
1.18
W/℃
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=7mH, IAS=11.4A, VDD=50V, RG=25Ω, Satarting TJ=25°C.
4. ISD ≤ 11.4A, di/dt ≤ 200A/μs, VDD ≤BVDSS, Satarting TJ=25°C.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
℃
/W
Junction to Case
θJC
0.85
℃
/W



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