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S8050 Datasheet(PDF) 3 Page - Unisonic Technologies |
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S8050 Datasheet(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() S8050 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R201-013.B TYPICAL CHARACTERISTICS Static Characteristics Collector-Emitter Voltage, VCE ( V) 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.2 0.3 0.4 0.5 IB=0.5mA IB=1.0mA IB=1.5mA IB=2.0mA IB=2.5mA IB=3.0mA DC Current Gain Collector Current, Ic (mA) VCE=1V 10-1 100 101 102 103 100 101 102 103 Base-Emitter on Voltage Base-Emitter Voltage, VBE (V) 0 0.2 0.4 0.6 0.8 1.0 VCE=1V Collector Current, Ic (mA) Saturation Voltage VCE(SAT) VBE(SAT) Ic=10*IB 100 101 102 10-1 10-1 100 101 102 103 101 102 103 104 Current Gain-Bandwidth Product Collector Output Capacitance Collector Current, Ic (mA) VCE=10V Collector-Base Voltage (V) f=1MHz IE=0 100 101 102 103 100 101 102 103 100 101 102 103 100 101 102 103 |
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