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UD4P20G-S08-R Datasheet(PDF) 3 Page - Unisonic Technologies

Part # UD4P20G-S08-R
Description  4A, 20V DUAL P-CHANNEL POWER MOSFET
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UD4P20G-S08-R Datasheet(HTML) 3 Page - Unisonic Technologies

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UD4P20
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-345.c
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS =0V)
VDSS
-20
V
Drain-Gate Voltage (RGS = 20kΩ)
VDGR
-20
V
Gate-Source Voltage
VGSS
±16
V
Continuous Drain Current
(TC =25°C, Single Operation)
ID
-4
A
Pulsed Drain Current (Note 2)
IDM
-16
A
Power Dissipation (TC=25°C)
Dual Operation
PD
1.6
W
Single Operation
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
Single Operation
θJA
62.5
°C/W
Dual Operation
78
°C/W
Note: When Mounted on 0.5 in
2 pad of 2oz. copper
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID = -250μA, VGS = 0 V
-20
V
Drain-Source Leakage Current
IDSS
VDS =-20 V, VGS =0 V
-1
µA
Gate- Source Leakage Current
IGSS
VGS = ±16 V, VDS=0 V
±100
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = -250μA
-1
-1.6
-2.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS =-10 V, ID =-2A
70
80
mΩ
VGS =-4.5 V, ID =-2A
85
100
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =-25 V, VGS =0 V
f=1MHz
1350
pF
Output Capacitance
COSS
490
pF
Reverse Transfer Capacitance
CRSS
130
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=-15V, ID=-2A ,
VGS=-4.5 V, RG=4.7 Ω
25
ns
Turn-ON Rise Time
tR
35
ns
Turn-OFF Delay Time
tD(OFF)
125
ns
Turn-OFF Fall-Time
tF
35
ns
Total Gate Charge
QG
VDD =-24 V, VGS =-5 V
ID =-4 A
12.5
16
nC
Gate Source Charge
QGS
5
nC
Gate Drain Charge
QGD
3
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 1)
VSD
ISD =-4 A, VGS =0 V
-1.2
V
Maximum Continuous Drain-Source Diode
Forward Current
ISD
-4
A
Maximum Pulsed Drain-Source Diode
Forward Current (Note 2)
ISDM
-16
A
Reverse Recovery Time
trr
ISD=-4A, VDD=-15V
dI/dt =100A/μs, TJ=150°C
45
ns
Reverse Recovery Charge
QRR
36
nC
Notes: 1. Pulsed: Pulse duration =300μS, duty cycle≤1.5 %.
2. Pulse width limited by safe operating area.



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