UF520

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-659.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

9.2

A

Continuous

6.5

A

Drain Current

Pulsed (Note 2)

37

A

Single Pulsed Avalanche Energy (Note 3)

36

mJ

Power Dissipation

50

W

Junction Temperature

+150

°C

Storage Temperature

-55~+175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

80

°C/W

Junction to Case

2.5

°C/W