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UP9972 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UP9972
Description  N-CHANNEL ENHANCEMENT MODE
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UP9972 Datasheet(HTML) 2 Page - Unisonic Technologies

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UP9972
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-372.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±25
V
Continuous Drain Current (VGS =10V, TC=25°C)
ID
60
A
Pulsed Drain Current (Note 2)
IDM
230
A
Avalanche Current (Note 3)
IAR
30
A
Single Pulse Avalanche Energy (Note 3)
EAS
45
mJ
Power Dissipation (TC=25°C)
PD
89
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L = 100μH, VDD =30V, IAS=30A, RG =25Ω, Starting TJ =25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to ambient
θJA
62
°C/W
Junction to case
θJC
1.4
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
60
V
Breakdown Voltage Temperature Coefficient
J
DSS
T
Δ
BV
Δ
Reference to 25°C, ID=1mA
0.06
V/°C
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
10
μA
Gate-Source Leakage Current
IGSS
VGS=±25V, VDS=0V
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
1
3
V
VGS=10V, ID=35A
18
mΩ
Drain to Source On-state Resistance (Note)
RDS(ON)
VGS=4.5V, ID=25A
22
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
3170 5070
pF
Output Capacitance
COSS
280
pF
Reverse Transfer Capacitance
CRSS
VGS=0V,VDS=25V, f=1.0MHz
230
pF
Gate Resistance
RG
f=1.0MHz
1.7
Ω
SWITCHING PARAMETERS
Turn-ON Delay Time (Note)
tD(ON)
11
ns
Turn-ON Rise Time
tR
58
ns
Turn-OFF Delay Time
tD(OFF)
45
ns
Turn-OFF Fall-Time
tF
VDS=30V, VGS=10V , ID=35A
RG=3.3Ω, RD=0.86Ω
80
ns
Total Gate Charge (Note)
QG
32
51
nC
Gate Source Charge
QGS
8
nC
Gate Drain Charge
QGD
ID=35A, VDS=48V, VGS=4.5V
20
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
VSD
IS=35A, VGS=0V
1.2
V
Reverse Recovery Time (Note)
tRR
50
ns
Reverse Recovery Charge
QRR
IS=35A, VGS=0V
dI/dt=100A/µs
48
nC
Note: Pulse test



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