UT65N03

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-556.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous

65

A

Drain Current

Pulsed

130

A

Single Pulsed Avalanche Energy

71.7

mJ

54

W

Power Dissipation

0.43

W/°C

Junction Temperature

150

°C

Storage Temperature

-55~+175

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

2.3

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1

µA

Forward

+100

nA

Gate- Source Leakage Current

Reverse

-100

nA

ON CHARACTERISTICS

(Note 2)

Gate Threshold Voltage

1.3

1.7

3

V

6.5

8.4

Static Drain-Source On-State Resistance

9.7 14.6

mΩ

DYNAMIC PARAMETERS

Input Capacitance

1177 1400

pF

Output Capacitance

555

pF

Reverse Transfer Capacitance

218

pF

SWITCHING PARAMETERS

Total Gate Charge

12.2

16

nC

Gate to Source Charge

2.95

nC

Gate to Drain Charge

6.08

nC

Turn-ON Delay Time

6.3

ns

Rise Time

18.6

ns

Turn-OFF Delay Time

20.3

ns

Fall-Time

8.8

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

0.85 1.1

V

Maximum Body-Diode Continuous Current

65

A

Maximum Body-Diode Pulsed Current

130

A

Note: 1.

Pulse Test: Pulse Width ≤ 300 _s, Duty Cycle ≤ 2%.

2.

Switching characteristics are independent of operating junction temperatures.

3.