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UT7401G-AE2-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UT7401G-AE2-R
Description  1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT7401G-AE2-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UT7401
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-122.E
ABSOLUTE MAXIMUM RATINGS (Ta = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 2)
TA=25°C
ID
-1.2
A
TA=70°C
-1.0
A
Pulsed Drain Current (Note 3)
IDM
-10
A
Power Dissipation (Note 2)
TA=25°C
PD
350
mW
TA=70°C
220
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note:1.
2.
3.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
Pulse width ≤300us, duty cycle ≤2%.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 2)
θJA
425
°С/W
ELECTRICAL CHARACTERISTICS (TJ=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-24V, VGS=0V
-1
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±12V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-0.6
-1
-1.4
V
Drain-Source On-State Resistance (Note 1)
RDS(ON)
VGS=-10V, ID=-1.2A
122
150
mΩ
VGS=-4.5V, ID=-1.2A
147
200
mΩ
VGS=-2.5V, ID=-1.0A
207
280
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V, VDS=-15V,
f=1MHz
409
pF
Output Capacitance
COSS
55
pF
Reverse Transfer Capacitance
CRSS
42
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 1)
tD(ON)
VDS=-15V, VGS=-10V,
RG=3Ω, RL=15Ω
6.2
ns
Turn-ON Rise Time
tR
3.2
ns
Turn-OFF Delay Time
tD(OFF)
41.2
ns
Turn-OFF Fall Time
tF
14.5
ns
Total Gate Charge (Note 1)
QG
VDS=-15V, VGS=-4.5V,
ID=-1A
5.06
nC
Gate-Source Charge
QGS
0.72
nC
Gate-Drain Charge
QGD
1.58
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VGS=0V, IS=-1A
-0.85
-1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-0.5
A
Notes: 1. Pulse width ≤300us, duty cycle ≤2%.
2. Surface mounted on 1 in
2 copper pad of FR4 board



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