UTT30P06

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 3

www.unisonic.com.tw

QW-R502-622.a

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-60

V

Drain-Source Leakage Current

-10

µA

Forward

+100

nA

Gate- Source Leakage

Current

Reverse

-100

nA

ON CHARACTERISTICS

(Note 1)

Gate Threshold Voltage

-2.0

-2.6

-4.0

V

Static Drain-Source On-State Resistance

0.067 0.08

Ω

-2.0

-2.9

V

Drain-Source On-Voltage

-2.8

V

DYNAMIC PARAMETERS

Input Capacitance

1562 2190

pF

Output Capacitance

524

730

pF

Reverse Transfer Capacitance

154

310

pF

SWITCHING PARAMETERS

(Note 2)

54

80

nC

9.0

nC

26

nC

Gate Charge

20

nC

Turn-ON Delay Time

14.7

30

ns

Rise Time

25.9

50

ns

Turn-OFF Delay Time

98

200

ns

Fall-Time

52.4

100

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

-2.3

-3.0

V

Body Diode Reverse Recovery Time

175

ns

Body Diode Reverse Recovery Charge

0.965

µC

Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.

2. Switching characteristics are independent of operating junction temperature.

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.