UTT40P04 datasheet(2/3 Pages) UTC

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UTT40P04

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-616.b

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-40

Gate-Source Voltage

VGSS

±20

Drain Current

Continuous

Package limited

-50

Silicon limited

-58

Pulsed

IDM

-100

Single Pulsed Avalanche Energy (Note 2)

EAS

337

Power Dissipation

TC=25°C

TO-220

125

TO-251

TA=25°C

TO-220

TO-251

1.1

Junction Temperature

-55~+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

θJA

62.5

°C/W

TO-251

110

Junction to Case

TO-220

θJC

°C/W

TO-251

2.27

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-250µA, VGS=0V

-40

Drain-Source Leakage Current

IDSS

VDS=-32V, VGS=0V

-1

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100

Reverse

VGS=-20V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-1

-1.8

-3

Static Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-12.7A

10.1 12.3

mΩ

VGS=-4.5V, ID=-10.4A

14.5 18.0

mΩ

VGS=-10V, ID=-12.7A, TJ=125°C

15.3 18.7

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=-20V, f=1.0MHz

2085 2775

Output Capacitance

COSS

360 480

Reverse Transfer Capacitance

CRSS

210

310

Gate Resistance

f=1.0MHz

4.6

Ω

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