UTT50P04

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-598.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-40

V

Gate-Source Voltage

±20

V

-60 (Note 3)

A

Continuous

(Note 2)

-43

A

Drain Current

Pulsed

-100

A

Continuous Source Current (Diode Conduction)

-60 (Note 3)

A

Avalanche Current

-40

A

Avalanche Energy

80

mJ

93.7 (Note 2)

W

Power Dissipation (Note 2)

3 (Note 1)

W

Junction Temperature

-55~175

°C

Storage Temperature

-55~175

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

t≤10 sec.

18

Junction to Ambient (Note 1)

Steady State

50

Junction to Case

1.6

°C/W

Notes: 1. Surface Mounted on 1”x1” FR4 Board.

2. See SOA curve for voltage derating.

3. Calculated based on maximum allowable Junction Temperature. Package limitation current is 50A.