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UTT60N05 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UTT60N05
Description  60A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT60N05 Datasheet(HTML) 2 Page - Unisonic Technologies

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UTT60N05
Preliminary
Power MOSFE
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-662.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±20
V
Continuous
ID
60
A
Drain Current
Pulsed
IDM
120
A
Single Pulsed
EAS
600
mJ
Avalanche Energy
Repetitive
EAR
150
mJ
Power Dissipation
PD
125
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
1
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
50
V
Drain-Source Leakage Current
IDSS
VDS=50V, VGS=0V
1
µA
Forward
VGS=+20V, VDS=0V
+100 nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2
4
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
14
18
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
2000
pF
Output Capacitance
COSS
400
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
115
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
39
60
nC
Gate to Source Charge
QGS
12
nC
Gate to Drain Charge
QGD
VGS=10V, VDS=30V, ID=60A,
IG=3.33mA
10
nC
Turn-ON Delay Time
tD(ON)
12
30
ns
Rise Time
tR
11
30
ns
Turn-OFF Delay Time
tD(OFF)
25
50
ns
Fall-Time
tF
VDD=30V, ID=15A, RG=4.7Ω,
VGS=10V
15
30
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
60
A
Maximum Body-Diode Pulsed Current
ISM
120
A
Drain-Source Diode Forward Voltage
VSD
IS=60A, VGS=0V
1.6
V



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