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UTT65P04 Datasheet(PDF) 2 Page - Unisonic Technologies |
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UTT65P04 Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UTT65P04 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-615.a ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V TC=25°C -65 A Continuous (TJ=175°C) TC=125°C ID -37 A Drain Current Pulsed IDM -240 A Avalanche Current IAR -60 A Repetitive Avalanche Energy (Note 2) EAR 180 mJ Power Dissipation TC=25°C PD 120 (Note 4) W Junction Temperature TJ -55~+175 °C Storage Temperature TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Duty cycle≤1%. 3. When mounted on 1” square PCB (FR-4 material). 4. See SOA curve for voltage derating. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 1.25 °C/W |
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