UTT60P03G-TN3-R datasheet(3/5 Pages) UTC

3 / 5 page

UTT60P03

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-605.a

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS ID=-250µA, VGS=0V

-30

VDS=Rated BVDSS, VGS=0V

-1

Drain-Source Leakage Current

IDSS

VDS=0.8×Rated BVDSS, TC=150°C

-50

µA

Forward

VGS=+20V

+100

Gate- Source Leakage

Current

Reverse

IGSS

VGS=-20V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS=VGS, ID=-250µA

-2

-4

Static Drain-Source On-State

Resistance (Note)

RDS(ON) VGS=-10V, ID=-60A

0.027

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

3000

Output Capacitance

COSS

1500

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=-25V, f=1.0MHz

525

SWITCHING PARAMETERS

Total Gate Charge

VGS=0 ~ -20V

190

230

Gate Charge at 10V

QG(-10) VGS=0 ~ -10V

100

120

Threshold Gate Charge

QG(TH) VGS=0 ~ -2V

VDD=-24V, ID≈-60A,

RL=0.4Ω, IG(REF)=-3mA

7.5

Turn-On Time

tON

140

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

Turn-Off Time

tOFF

VDD=15V, VGS=-10V, ID≈60A,

RL=0.25Ω, RG=2.5Ω

115

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

(Note )

VSD

ISD=-60A

-1.75

Body Diode Reverse Recovery Time

tRR

ISD=-60A, ISD/dt=100A/µs

200

Note: Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

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