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UTT80N05 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UTT80N05
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT80N05 Datasheet(HTML) 2 Page - Unisonic Technologies

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UTT80N05
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-695.a
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 2)
VDSS
50
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous (TC<135°C, VGS=10V)
ID
80
A
Pulsed
IDM
320
A
Single Pulsed Avalanche Energy (Note 3)
EAS
860
mJ
Power Dissipation
PD
312
W
Derate Above 25°C
2.5
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting TJ=25~150°C
3. Starting TJ=25°C , L = 0.42mH, IAS = 64A
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62
°C/W
Junction to Case
θJC
0.4
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
50
V
Drain-Source Leakage Current
IDSS
VDS=50V, VGS=0V
1
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2
2.8
4
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=80A
5.1
7
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
3565
pF
Output Capacitance
COSS
1310
pF
Reverse Transfer Capacitance
CRSS
395
pF
SWITCHING PARAMETERS
Total Gate Charge at 20V
QG
VDD=30V, ID=80A, RL=0.4Ω
207 269
nC
Gate to Source Charge
QGS
17.2
nC
Gate to Drain Charge
QGD
52
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=80A, RL=0.4Ω,
VGS=10V, RGS=2.5 Ω
12
ns
Rise Time
tR
34
ns
Turn-OFF Delay Time
tD(OFF)
37
ns
Fall-Time
tF
23
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=80A
0.9 1.25
V



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