UTT100P03 datasheet(2/3 Pages) UTC

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UTT100P03

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-697.a

ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

-16/+5

Drain Current

Continuous

(Note 2)

TC=25°C, VGS=-10V

-100

TC=100°C, VGS=-10V

-100 (Note 3)

Pulsed (Note 3)

TC=25°C

IDM

-400

Single Pulsed Avalanche Energy

ID=-80A

EAS

450

Power Dissipation

TC=25°C

200

Junction Temperature

+175

°C

Storage Temperature

TSTG

-55~+175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Current is limited by bondwire; with a θJC = 0.65 °C/W the chip is able to carry ID=-195A at 25°C.

3. Defined by design. Not subject to production test.

THERMAL DATA (Note 2)

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

°C/W

Junction to Case

θJC

0.65

°C/W

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-250µA, VGS=0V

-30

Drain-Source Leakage Current

IDSS

VDS=-30V, VGS=0V, TJ=25°C

-0.1

-1

µA

VDS=-30V,VGS=0V,TC=125°C (Note 1)

-10 -100 µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+16V, VDS=0V

+10 +100 nA

Reverse

VGS=-16V, VDS=0V

-10 -100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-475µA

-1

-1.5 -2.1

Static Drain-Source On-State Resistance

RDS(ON)

VGS=-4.5V, ID=-50A

4.8

7.6

mΩ

VGS=-10, ID=-80A

3.3

4.3

mΩ

DYNAMIC PARAMETERS

(Note 1)

Input Capacitance

CISS

VGS=0V, VDS=-25V, f=1.0MHz

7150 9300 pF

Output Capacitance

COSS

2150 2800 pF

Reverse Transfer Capacitance

CRSS

1650 2500 pF

SWITCHING PARAMETERS

(Note 1)

Total Gate Charge

VDD=-24V, VGS=0~-10V, ID=-80A

150 200

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

82.5 nC

Turn-ON Delay Time

tD(ON)

VDD=-15V, VGS=-10V, ID=-50A,

RG=6Ω

Rise Time

Turn-OFF Delay Time

tD(OFF)

200

Fall-Time

180

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

TA = 25°C (Note 1)

-100

Maximum Body-Diode Pulsed Current

ISM

TA = 25°C (Note 1)

-400

Drain-Source Diode Forward Voltage

VSD

IS=-80A, VGS=0V

-0.6

-1

-1.2

Body Diode Reverse Recovery Time

trr

VR=-15V, IF=-50A,

dIF/dt=100A/µs (Note 1)

Body Diode Reverse Recovery Charge

QRR

Notes: 1. Defined by design. Not subject to production test.

2. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2 (one layer, 70 µm thick) copper area for

drain connection. PCB is vertical in still air.

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