UTT150N03

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-516.a

VER.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous

150

A

Drain Current

Pulsed

266

A

Single Pulsed Avalanche Energy (Note 2)

300

mJ

Power Dissipation

160

W

Power Dissipation

Derate above 25°C

1.07

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62

°C/W

Junction to Case

0.94

°C/W

註解 [U1]: 设计人员根据曲

线图得到的（pulse

width=300us）