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CDBW130-G Datasheet(PDF) 1 Page - Comchip Technology |
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CDBW130-G Datasheet(HTML) 1 Page - Comchip Technology |
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1 / 4 page  CDBW120-G Thru. CDBW140-G Forward current: 1.0A Reverse voltage: 20 to 40V RoHS Device QW-BB020 Page 1 REV:D Features -For use in low voltage, high frequency inverters. -Free wheeling, and polarity protection applications. Mechanical Data -Case: SOD-123, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. -Polarity: indicated by cathode end. -Weight: 0.0097 gram( . approx.) Marking CDBW120-G: SJ CDBW130-G: SK CDBW140-G: SL Dimensions in inches and (millimeter) SOD-123 Parameter Unit Maximum Ratings (At Ta=25°C, unless otherwise noted) Non-repetitive peak reverse voltage Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current Peak forward surge current @8.3ms Repetitive peak forward current Power dissipation Thermal resistance, junction to ambient Storage temperature Symbol CDBW120-G 0.110 (2.80) 0.102 (2.60) 0.067 (1.70) 0.059 (1.50) 0.152 (3.85) 0.140 (3.55) 0.049 (1.25) 0.041 (1.05) 0.026 (0.65) 0.018 (0.45) 0.02 (0.50)REF 0.006 (0.15)max 0.004 (0.10)max CDBW130-G CDBW140-G VRM VRRM VRWM VR VR(RMS) IO IFSM IFRM PD RθJA TSTG 20 20 14 30 30 21 1 25 625 250 500 -65 ~ +150 40 40 28 V V V A A mA mW °C/W °C Parameter Unit Electrical Characteristics (At Ta=25°C, unless otherwise noted) Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Symbol Min. Max. 20 30 40 V mA V pF Conditions CDBW120-G CDBW130-G CDBW140-G CDBW120-G CDBW130-G CDBW140-G CDBW120-G CDBW130-G CDBW140-G CDBW120-G CDBW130-G CDBW140-G VR=4V, f=1MHz VBR IR VF CD 1 0.45 0.55 0.60 0.75 0.875 0.90 120 IR=1mA VR=20V VR=30V VR=40V IF=1A IF=3A Comchip Technology CO., LTD. SMD Schottky Barrier Diodes |
Similar Part No. - CDBW130-G |
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Similar Description - CDBW130-G |
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