Page 2

QW-BE007

REV:C

Comchip Technology CO., LTD.

Rating and Characteristic Curves (CEFM101

)

-G Thru. CEFM105-G

SMD Efficient Fast Recovery Rectifiers

Fig. 3 - Test Circuit Diagram and Reverse Recovery

Time Characteristics

(+)

(+)

25Vdc

(approx.)

( )

( )

PULSE

GENERATOR

(NOTE 2)

OSCILLISCOPE

(NOTE 1)

1

NON-

INDUCTIVE

W

NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.

2. Rise Time= 10ns max., Source Impedance= 50 ohms.

+0.5A

0

-0.25A

-1.0A

|

|

|

|

|

|

|

|

1cm

SET TIME BASE FOR

50 / 20ns / cm

trr

D.U.T.

10

NONINDUCTIVE

50

NONINDUCTIVE

W

W

Fig. 2 - Typical Forward Current Derating Curve

Ambient Temperature, (°C)

1.2

1.0

0.8

0.6

0.4

0.2

0

Fig.1 - Typical Forward Characteristics

Fig.5 - Typical Junction Capacitance

Reverse Voltage, (V)

Fig. 4 - Maximum Non-Repetitive Forward

Surge Current

0

10

15

30

25

20

1

5

10

50

100

Number of Cycles at 60Hz

8.3mS Single Half Sine

Wave JEDEC methode

0

25

50

75

100

125

150

175

Single Phase

Resistive or Inductive Load

0.375”(9.5mm)Lead Length

Forward Voltage, (V)

0.01

0.1

1

10

0.8

0.4

1.2

2.0

1.6

0.6

1.0

1.4

1.8

Pulse width 300µs

Tj=25 C

1% duty cycle

0

5

10

15

20

25

30

35

0.01

0.1

1.0

10

100