PZTA13 datasheet(2/4 Pages) SIEMENS

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Semiconductor Group

PZTA 13

PZTA 14

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Collector-emitter breakdown voltage

IC = 100

µA

V(BR)CES

–

µA

Collector-base cutoff current

VCE = 30 V, IE = 0

VCE = 30 V, IE = 0, TA = 150 ˚C

ICB0

–

100

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Emitter-base breakdown voltage

IE = 10

µA, IC = 0

V(BR)EB0

–

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

VCEsat

–

1.5

–

DC current gain

IC = 10 mA, VCE = 5 V

PZTA 13

PZTA 14

IC = 100 mA, VCE = 5 V

PZTA 13

PZTA 14

hFE

5000

10000

20000

–

MHz

Transition frequency

IC = 50 mA, VCE = 5 V, f = 100 MHz

125

–

AC characteristics

Collector-base breakdown voltage

IC = 100

µA, IB = 0

V(BR)CB0

–

Emitter-base cutoff current

VEB = 10 V, IC = 0

IEB0

–

100

Base-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

VBEsat

–

2.0

Pulse test conditions: t

≤ 300 µs, D = 2 %.

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