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BCX6825 Datasheet(PDF) 3 Page - Diodes Incorporated

Part # BCX6825
Description  20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89
PDF  5 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BCX6825 Datasheet(HTML) 3 Page - Diodes Incorporated

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BCX6825
Datasheet Number: DS33010 Rev. 4 - 2
3 of 5
www.diodes.com
February 2012
© Diodes Incorporated
BCX6825
A Product Line of
Diodes Incorporated
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ.
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
25
-
-
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 7)
BVCEO
20
-
-
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
5
-
-
V
IE = 100µA
Collector Cutoff Current
ICBO
-
-
100
10
nA
µA
VCB = 25V
VCB = 25V, TA = 125°C
Emitter Cutoff Current
IEBO
-
-
10
µA
VEB = 5V
DC current transfer Static ratio (Note 7)
hFE
50
160
60
-
250
-
-
400
-
-
IC = 5mA, VCE = 10V
IC = 500mA, VCE = 1V
IC = 1A, VCE = 1V
Collector-Emitter Saturation Voltage (Note 7)
VCE(sat)
-
-
0.5
V
IC = 1A, IB = 100mA
Base-Emitter Turn-on Voltage (Note 7)
VBE(on)
-
-
1.0
V
IC = 1A, VCE = 1V
Transitional Frequency
fT
100
-
-
MHz
IC = 100mA, VCE = 5V
f = 100MHz
Output capacitance
Cobo
-
-
25
pF
VCB = 10V, f = 1MHz
Notes:
7. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
Typical Characteristics



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