ZXTP4003G

Datasheet Number: DS35459 Rev 1 - 2

2 of 5

www.diodes.com

December 2011

© Diodes Incorporated

A Product Line of

Diodes Incorporated

ZXTP4003G

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-100

V

Collector-Emitter Voltage

-100

V

Emitter-Base Voltage

-7

V

Continuous Collector Current

-1

A

Peak Pulse Current (Note 4)

-3

A

Base Current

-500

mA

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3)

2

W

Thermal Resistance, Junction to Ambient (Note 3)

62.5

°C/W

Thermal Resistance, Junction to Leads (Note 5)

28.75

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

3. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions

4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle

≤ 2%.

5. Thermal resistance from junction to solder-point (on the exposed collector pad).

Thermal Characteristics and Derating Information

0

20

40

60

80

100

120

140

160

0.0

0.4

0.8

1.2

1.6

2.0

Derating Curve

Temperature (°C)

100µ

1m

10m 100m

1

10

100

1k

0

10

20

30

40

50

60

70

T

amb

=25°C

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Pulse Width (s)

100µ

1m

10m 100m

1

10

100

1k

1

10

100

Single Pulse

T

amb

=25°C

Pulse Power Dissipation

Pulse Width (s)