SEMICONDUCTOR

RoHS

RoHS

Page 2 of 3

Device code

30

12

MTP

-

Module type: ”MTP” for 3Ø Brıdge

1

2

3

-

RRM

-

Voltage code: code x 100 = V

I

rating: "30" for 30A

F(AV)

MTP30

MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

V

SYMBOL

MTP30

UNIT

08

900

1100

1300

800

1000

1200

12

10

800

1000

1200

V

Maximum repetitive peak reverse voltage

Peak reverse non-repetitive voltage

Maximum DC blocking voltage

Maximum average forward rectified output current

Peak forward surge current single sine-wave superimposed on

rated load

Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)

for fusing

RMS isolation voltage from case to leads

Operating junction storage temperature range

2

I t

2500

1200

30

500

2

A s

A

A

V

ºC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

µA

SYMBOL

MTP30

UNIT

08

12

10

Maximum instantaneous forward drop per diode

Maximum reverse DC current at rated DC blocking

2000

1.1

20

voltage per diod

TEST

CONDITIONS

F

A

A

THERMAL AND MECHANICAC (T = 25°C unless otherwise noted)

A

PARAMETER

°C/W

SYMBOL

MTP30

UNIT

08

12

10

Typical thermal resistance

(1) With heatsink, single side heat dissipation, half sine wave.

(1)

0.44

(2) M6 screw.

Notes

Storage temperature range

ºC

TEST CONDITIONS

junction to case

Single-side heat dissipation, sine

half wave

Mounting

± 10 %

to heatsink M6

A mounting compound is recommended

and the torque should be rechecked after

a

for the spread

period of 3 hours to allow

of the compound.

4

Nm

Approximate weight

120

torque

g