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OPA656 Datasheet(PDF) 2 Page - Texas Instruments

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Part # OPA656
Description  WIDEBAND, UNITY-GAIN STABLE, FET-INPUT OPERATIONAL AMPLIFIER
PDF  4 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

OPA656 Datasheet(HTML) 2 Page - Texas Instruments

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OPA656-DIE
SBOS596 – MARCH 2012
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
BARE DIE INFORMATION
BACKSIDE
BOND PAD
BOND PAD
DIE THICKNESS
BACKSIDE FINISH
POTENTIAL
METALLIZATION COMPOSITION
THICKNESS
15 mils.
Silicon with backgrind
VS-
TiW/AlCu (0.5%)
1100 nm
Table 1. Bond Pad Coordinates in Microns(1)
DESCRIPTION
PAD NUMBER
X MIN
Y MIN
X MAX
Y MAX
Inverting Input
1
27
623
127
723
NonInverting Input
2
27
53
127
153
N/C
3
181
53
281
153
Output
4
723
27
823
127
VS-
5
723
337
823
439
VS+
6
723
649
823
749
N/C
7
181
623
281
723
(1)
Substrate is VS-.
2
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Copyright © 2012, Texas Instruments Incorporated
Product Folder Link(s): OPA656-DIE



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