SPL 2Fxx

(SFH 4874x6)

Semiconductor Group

2

Diode Characteristics

(T

Parameter

Symbol

Values

Unit

min.

typ.

max.

Emission wavelength

1)

λ

peak

803

840

935

808

850

940

813

860

945

nm

Spectral width (FWHM)

1)

∆λ

2nm

Output power

2)

P

opt

0.75

W

Differential efficiency

2)

808 nm

850 nm

940 nm

η

0.60

0.60

0.55

0.70

0.70

0.60

0.85

0.80

0.70

W/A

Threshold current

808 nm

850 nm

940 nm

I

th

0.40

0.30

0.30

0.45

0.40

0.35

0.55

0.50

0.40

A

Operating current

1)

808 nm

850 nm

940 nm

I

op

1.3

1.3

1.4

1.5

1.5

1.6

1.8

1.8

1.8

A

Operating voltage

1)

V

op

2.0

V

Differential series resistance

r

s

0.2

0.4

Ω

Characteristic temperature (threshold)

3)

T

0

150

K

Temperature coefficient of current

∂I

0.5

%/K

Temperature coefficient of wavelength

4)

∂λ / ∂T

0.25

0.27

0.30

nm/K

Thermal resistance (junction

→ heat sink)

R

th JA

10

K/W

1) Standard operating conditions refer to 0.75 W after 5 m of fiber (core

∅ 125 µm, 0.35 NA, attn. 8 db/km)

2) Optical power measurements refer to output from fiber

3) Model for the thermal behavior of threshold current: I

4) Depending on emission wavelength

NTC Thermistor

Parameter

Symbol Typ. Values

Unit

Resistance at room temperature (25 °C)

R

NTC

10

k

Ω