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70NT Datasheet(PDF) 1 Page - Naina Semiconductor ltd. |
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70NT Datasheet(HTML) 1 Page - Naina Semiconductor ltd. |
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1 / 2 page  Naina Semiconductor 1 D-95, Sector 63, Noida sales@nainasemi.com Phase Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Metric thread type available • Low thermal resistance Thermal and Mechanical Specifications (TJ Parameters Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Mounting torque Approximate weight Electrical Ratings (TJ = 250C, unless otherwise noted) Parameters Symbol Maximum on-state average current 180 O sinusoidal conduction @ TJ = 85 0C Maximum RMS on-state current Maximum peak, one cycle non-repetitive surge current Maximum I 2t for fusing Maximum repetitive peak on and off-state voltage range Maximum peak on-state voltage (TJ = 25 0C, Ipeak = 79A) Maximum holding current @ TJ Maximum latching current @TJ Maximum rate of rise of turn-on current, VDRM ≤ 600V Critical rate of rise of off-state voltage TJ = TJ maximum, 100% VDRM TJ = TJ maximum, 67% VDRM Maximum gate current required to trigger anode supply 6 V resistive load @TJ Maximum gate voltage required to trigger emiconductor Ltd. Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120 sales@nainasemi.com • www.nainasemi.com se Control Thyristors, 70A glass passivation for high reliability Exceptional stability at high temperatures TO-209AC ( J = 25 0C, unless otherwise noted) Symbol Values Maximum operating junction temperature range TJ - 60 to TStg - 60 to Rth(JC) 0. 0.2(min) to C, unless otherwise noted) Symbol Values Units IT(AV) 70 A IT(RMS) 110 A ITSM 1800 A I 2t 1620 A 2s VRRM, VDRM 200 to 1600 V VTM 1.3 V IH 150 mA IL 400 mA di/dt 200 A/µs dv/dt 100 V/µs 300 IGT 150 mA VGT 2.0 V 70NT 4205450 • Fax: 0120-4273653 209AC (TO-94) Values Units to +125 0C to +125 0C 0.3 0C/W 0.2(min) to 0.3(max) mkg 14 g |
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