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DMP1245UFCL Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMP1245UFCL Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 7 page ![]() DMP1245UFCL Document number: DS35505 Rev. 1 - 2 1 of 7 www.diodes.com November 2011 © Diodes Incorporated DMP1245UFCL A Product Line of Diodes Incorporated 12V P-CHANNEL ENHANCEMENT MODE MOSFET Summary V(BR)DSS RDS(on) max ID max -12V 29m Ω @VGS = -4.5V -6.6 A 45m Ω @VGS = -2.5V -5.3 A 60m Ω @VGS = -1.8V -4.6 A 100m Ω @VGS = -1.5V -3.5 A Application This device provides a high performance, low RDS(ON) P channel MOSFETs in the thermally and space efficient X1-DFN1616-6 package. The low RDS(ON) of this MOSFET ensures conduction losses are kept making it ideal for use as a: • Battery disconnect switch • Load switch for power management functions Features and Benefits • Typical off board profile of 0.5mm - ideally suited for thin applications • Low RDS(ON) – minimizes conduction losses • PCB footprint of 2.56mm 2 • 3kV ESD Protected Gate – protected against human borne ESD • “Lead-Free”, RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: X1-DFN1616-6 Type E • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Lead Free Plating (NiPdAu Finish over Copper leadframe). • Terminals: Solderable per MIL-STD-202, Method 208 • Weight: 0.04 grams (approximate) Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMP1245UFCL-7 P5 7 8 3,000 Notes: 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information Date Code Key Year 2011 2012 2013 2014 2015 2016 2017 Code Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D X1-DFN1616-6 Type E Device symbol Bottom View Top View Top View Pin-Out Pin 1 P5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) Source Gate Protection Diode Gate Drain P5 YM |
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