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MSFC25 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # MSFC25
Description  Thyristor/Diode Modules
PDF  4 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

MSFC25 Datasheet(HTML) 1 Page - Microsemi Corporation

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MSFC25
MSFC25 – Rev 0
www.microsemi.com
Oct, 2011
1/4
Module Type
◆
Diode
Maximum Ratings
Symbol
Item
Conditions
Values
Units
ID
Output Current(D.C.)
Tc=85℃
25
A
IFSM
Surge forward current
t=10mS Tvj =45℃
550
A
i
2t
Circuit Fusing Consideration
1500
A
2s
Visol
Isolation Breakdown Voltage(R.M.S)
a.c.50HZ;r.m.s.;1min
3000
V
Tvj
Operating Junction Temperature
-40 to +125
℃
Tstg
Storage Temperature
-40 to +125
℃
Mt
Mounting Torque
To terminals(M5)
3±15%
Nm
Ms
To heatsink(M6)
5±15%
Nm
Weight
Module（
Approximately）
100
g
Thermal Characteristics
Symbol
Item
Conditions
Values
Units
Rth(j-c)
Thermal Impedance, max.
Junction to Case
0.45
℃
/W
Rth(c-s)
Thermal Impedance, max.
Case to Heatsink
0.10
℃
/W
Electrical Characteristics
Thyristor/Diode Modules
VRRM / VDRM
800 to 1600V
IFAV / ITAV
25Amp
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
TYPE
VRRM/VDRM
VRSM
MSFC25-08
MSFC25-12
MSFC25-16
800V
1200V
1600V
900V
1300V
1700V
Circuit
Values
Symbol
Item
Conditions
Min.
Typ.
Max.
Units
VFM
Forward Voltage Drop, max.
T=25℃ IF =75A
1.80
V
IRRM
Repetitive Peak Reverse Current,
max.
Tvj =25℃ VRD=VRRM
Tvj =125℃ VRD=VRRM
≤0.5
≤6
mA
mA
Features
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide
DBC ceramic isolated metal baseplate
UL E243882 approved


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