MCR310 Series

2

Motorola Thyristor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Forward Blocking Current(1)

TC = 110°C

(TJ = 110°C, VD = Rated VDRM)

TC = 25°C

IDRM

—

—

—

—

500

10

µA

µA

Peak Reverse Blocking Current(1)

TC = 110°C

(TJ = 110°C, VR = Rated VRRM)

TC = 25°C

IRRM

—

—

—

—

500

10

µA

µA

On-State Voltage

(ITM = 20 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%)

VTM

—

1.7

2.2

Volts

Gate Trigger Current, Continuous dc(2)

(VD = 12 V, RL = 100 Ω)

IGT

—

30

200

µA

Gate Trigger Voltage, Continuous dc

(VD = 12 V, RL = 100 Ω)

(VD = Rated VDRM, RL = 10 kΩ, TJ = 110°C)

VGT

—

0.1

0.5

—

1.5

—

Volts

Holding Current

(VD = 12 V, ITM = 100 mA)

IH

—

—

6

mA

Critical Rate of Rise of Forward Blocking Voltage

(VD = Rated VDRM, TJ = 110°C, Exponential Waveform)

dv/dt

—

10

—

V/

µs

Gate Controlled Turn-On Time

(VD = Rated VDRM, ITM = 20 A, IG = 2 mA)

tgt

—

1

—

µs

1. Ratings apply for negative gate voltage or RGK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage

on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage

applied exceeds the rated blocking voltage.

2. Does not include RGK current.

Figure 1. Average Current Derating

Figure 2. On-State Power Dissipation

Figure 3. Normalized Gate Current

Figure 4. Gate Voltage

0.3

120

0.5

1

2

–40

–20

0

20

40

60

80

90

100

3

140

VD = 12 Vdc

8

TJ, JUNCTION TEMPERATURE (°C)

0

2

4

110

6

70

80

90

100

10

120

IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

α = 30°

180

°

dc

α = CONDUCTION ANGLE

0.6

α

0.1

0.2

0.3

0.4

0.5

40

0.7

–60

–40

–20

0

100

20

60

80

120

VD = 12 Vdc

0

2

4

6

8

16

TJ, JUNCTION TEMPERATURE (°C)

0

4

8

12

20

α

α = CONDUCTION ANGLE

10

IT(AV), AVERAGE ON-STATE CURRENT (AMPS)

90

°

180

°

dc

60

°

α = 30°

60

°

90

°