10

RF Device Data

Freescale Semiconductor

MRF6VP11KHR6

PRODUCT DOCUMENTATION AND SOFTWARE

Refer to the following documents to aid your design process.

Application Notes

• AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

• EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software

• Electromigration MTTF Calculator

• RF High Power Model

For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &

Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

0

Jan. 2008

• Initial Release of Data Sheet

1

Apr. 2008

• Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS

compliant part number in Table 5, Test Circuit Component Designations and Values, p. 3.

• Added Fig. 12, Maximum Transient Thermal Impedance, p. 6

2

July 2008

• Added MTTF CW graph, Fig. 13, MTTF versus Junction Temperature, p. 6

3

Sept. 2008

• Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is

measured separately, p. 5

• Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5

• Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect the correct die size and increased

the MTTF factor accordingly, p. 6

• Corrected Fig. 14, MTTF versus Junction Temperature – Pulsed, to reflect the correct die size and

increased the MTTF factor accordingly, p. 6

4

Dec. 2008

impedance as measured from drain to drain, balanced configuration”, p. 7

5

July 2009

• Added 1000 W CW thermal data at 100 MHz to Thermal Characteristics table, p. 1

• Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26--RH”, changed R1

Description from “1 KΩ, 1/4 W Axial Leaded Resistor” to “1 KΩ, 1/4 W Carbon Leaded Resistor” and

“CMF601000R0FKEK” part number to “MCCFR0W4J0102A50”, Table 5, Test Circuit Component

Designations and Values, p. 3

• Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect change in Drain Efficiency from

70% to 72%, p. 6

• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,

Tools and Software, p. 20

6

Dec. 2009

• Device frequency range improved from 10--150 MHz to 1.8--150 MHz, p. 1

7

Apr. 2010

• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related

“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1